Download the NPT2021 datasheet PDF.
This datasheet also covers the NPT2021-MA variant, as both devices belong to the same gan wideband transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange.
Full PDF Text Transcription for NPT2021 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NPT2021. For precise diagrams, and layout, please refer to the original PDF.
NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2...
View more extracted text
Suitable for linear and saturated applications Tunable from DC - 2.5 GHz 48 V Operation 16.5 dB Gain at 2.5 GHz 55 % Drain Efficiency at 2.5 GHz 100 % RF Tested TO-272 Package RoHS* Compliant and 260°C reflow compatible Description The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-ba
NPT2021 Datasheet
