XP1080-QU Datasheet | MACOM Technology Solutions

Features -  Linear Power Amplifier -  On-Chip Power Detector -  Output Power Adjust -  25.0 d B Small Signal Gain -  +27.0 d Bm P1d B pression Point -  +38.0 d Bm OIP3 -  Lead-Free 7 mm 28-lead SMD Package -  Ro HS- pliant and 260°C Reflow patible Description The XP1080-QU is a four stage 37.0-40.0 GHz packaged Ga As MMIC power amplifier that has a small signal gain of 25.0 d B with a +38.0 d Bm Output Third Order Intercept. The amplifier contains an integrated, temperature pensated, on-chip power detector. This MMIC uses M/A- Technology Solutions’ Ga As p HEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device es in a Ro HS pliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications. Ordering Information Part Number XP1080-QU-0N00 XP1080-QU-0N0T XP1080-QU-EV1 Package bulk quantity tape and reel evaluation module Functional Schematic PDA PDC NC NC VD1 VD2 VD3 Rev. V2 2 16 3 15 4 14 5 13 6 12 7 11 8 10 RF IN 1 9 RF OUT VG1 VG2 VG3 NC NC Vref Vdet Pin Configuration 1 Pin No. Function Pin No. Function 1 RF Input 9 RF Output Gate Bias, Stage 1 Drain Bias for Stage 3 Gate Bias, Stage 2 Drain Bias for Stage 2 Gate Bias, Stage 3 Drain Bias for Stage 1 5-6 Not Connected 13,14 Not Connected Detector Reference...