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XX1010-QT - Doubler

Download the XX1010-QT datasheet PDF. This datasheet also covers the XX1010-QT-MA variant, as both devices belong to the same doubler family and are provided as variant models within a single manufacturer datasheet.

General Description

The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device.

Key Features

  •  Integrated Gain, Doubler and Driver Stages.
  •  +4.5 V Single Positive Bias.
  •  Integrated Bypassing Capacitor.
  •  +20 dBm Output Saturated Power.
  •  30 dBc Fundamental Suppression.
  •  On-Chip ESD Protection.
  •  100% RF, DC and Output Power Testing.
  •  Lead-Free 3 mm 16-Lead QFN Package.
  •  RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (XX1010-QT-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
XX1000 GaAs MMIC Active Doubler Mimix Broadband
XX1000-BD Active Doubler MACOM
XX1000-BD GaAs MMIC Active Doubler Mimix Broadband
XX1000-QT Active Doubler Mimix Broadband
XX1001-BD GaAs MMIC Doubler and Power Amplifier Mimix Broadband

Other Datasheets by MACOM Technology Solutions

Part Number Description
XX1007-BD Doubler
XX1007-QT Doubler

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XX1010-QT Doubler 14.625-15.0/29.25-30 GHz Features  Integrated Gain, Doubler and Driver Stages  +4.5 V Single Positive Bias  Integrated Bypassing Capacitor  +20 dBm Output Saturated Power  30 dBc Fundamental Suppression  On-Chip ESD Protection  100% RF, DC and Output Power Testing  Lead-Free 3 mm 16-Lead QFN Package  RoHS* Compliant and 260°C Reflow Compatible Description The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components.