Datasheet4U Logo Datasheet4U.com

XX1010-QT - Doubler

This page provides the datasheet information for the XX1010-QT, a member of the XX1010-QT-MA Doubler family.

Datasheet Summary

Description

The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device.

Features

  •  Integrated Gain, Doubler and Driver Stages.
  •  +4.5 V Single Positive Bias.
  •  Integrated Bypassing Capacitor.
  •  +20 dBm Output Saturated Power.
  •  30 dBc Fundamental Suppression.
  •  On-Chip ESD Protection.
  •  100% RF, DC and Output Power Testing.
  •  Lead-Free 3 mm 16-Lead QFN Package.
  •  RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Datasheet preview – XX1010-QT

Datasheet Details

Part number XX1010-QT
Manufacturer MA-COM
File Size 180.05 KB
Description Doubler
Datasheet download datasheet XX1010-QT Datasheet
Additional preview pages of the XX1010-QT datasheet.

📁 Similar Datasheet

  • XX1000 - GaAs MMIC Active Doubler (Mimix Broadband)
  • XX1000-BD - Active Doubler (MACOM)
  • XX1000-BD - GaAs MMIC Active Doubler (Mimix Broadband)
  • XX1000-QT - Active Doubler (Mimix Broadband)
  • XX1001-BD - GaAs MMIC Doubler and Power Amplifier (Mimix Broadband)
  • XX1001-QK - Doubler and Power Amplifier (Mimix Broadband)
  • XX1002 - GaAs MMIC Active Doubler (Mimix Broadband)
  • XX1002-QH - Active Doubler (Mimix Broadband)
  • XX1002-QH - Active Doubler (MACOM)
  • XX1003-QC - Active Doubler (Mimix Broadband)
Other Datasheets by MA-COM

Full PDF Text Transcription

Click to expand full text
XX1010-QT Doubler 14.625-15.0/29.25-30 GHz Features  Integrated Gain, Doubler and Driver Stages  +4.5 V Single Positive Bias  Integrated Bypassing Capacitor  +20 dBm Output Saturated Power  30 dBc Fundamental Suppression  On-Chip ESD Protection  100% RF, DC and Output Power Testing  Lead-Free 3 mm 16-Lead QFN Package  RoHS* Compliant and 260°C Reflow Compatible Description The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components.
Published: |