1N5819 Overview
The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard DO-7 hermetically sealed axial leaded glass package. This rugged device is capable of reliable operation in all military, mercial and industrial...
1N5819 Key Features
- Low Forward Voltage: 550 mV @ IF = 1 A
- High Reverse Breakdown Voltage: 30 V
- Hermetically Sealed Glass, DO-7
- Flexible Axial-lead Mounting Terminals
- RoHS- pliant
