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1N5819 - Axial Lead Schottky Diode

General Description

The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

Key Features

  • Low Forward Voltage: 550 mV @ IF = 1 A.
  • High Reverse Breakdown Voltage: 30 V.
  • Hermetically Sealed Glass, DO-7.
  • Flexible Axial-lead Mounting Terminals.
  • RoHS.
  • Compliant.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
1N5711 General Purpose Axial Lead Glass Packaged Schottky Diodes

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1N5819 Axial Lead Schottky Diode Features  Low Forward Voltage: 550 mV @ IF = 1 A  High Reverse Breakdown Voltage: 30 V  Hermetically Sealed Glass, DO-7  Flexible Axial-lead Mounting Terminals  RoHS* Compliant Description The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard DO-7 hermetically sealed axial leaded glass package. This rugged device is capable of reliable operation in all military, commercial and industrial applications. The 1N5819 is designed to be used in wide variety of applications, such as in high frequency rectifiers, reverse polarity protection and more.