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CMPA1C1D060D
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC,
Power Amplifier
Description
The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.
Typical Performance Over 12.7-13.25 GHz (TC = 25ºC)
Parameter
12.7 GHz
13.0 GHz
Small Signal Gain
26.5
26.
CMPA1C1D060D Datasheet
