MACOM Technology Solutions CMPA1C1D060D
The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process.| Part No. | CMPA1C1D060D |
|---|---|
| Datasheet | CMPA1C1D060D Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Power Amplifier |
| Buy | Stock & Price |
DESCRIPTION
GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. Typical Performance Over 12.7-13.25 GHz (TC = 25ºC) Parameter 12.7 GHz 13.0 GHz Small Signal Gain 26.5 26.2 PSAT @ PIN = 28 dBm 65 63 PAE @ PIN = 28 dBm 29 28 Note: All data in this table is based on fixtured, CW performance PN: CMPA1C1D060D 13.25 GHz 26 60 27 Units dB W %FEATURES
● 26 dB Small Signal Gain● 60 W Typical PSAT
● Operation up to 40 V
● High Breakdown Voltage
● High Temperature Operation
● Size 0.209 x 0.240 x 0.004 inches
APPLICATIONS
● Satellite Communications Uplink● PTP Radio 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information.
