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CMPA1C1D060D - Power Amplifier

General Description

The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process.

Key Features

  • 26 dB Small Signal Gain.
  • 60 W Typical PSAT.
  • Operation up to 40 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 0.209 x 0.240 x 0.004 inches.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA1C1D060D 60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier Description The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. Typical Performance Over 12.7-13.25 GHz (TC = 25ºC) Parameter 12.7 GHz 13.0 GHz Small Signal Gain 26.5 26.