CMPA1C1D060D Datasheet | MACOM Technology Solutions

60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier Description The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties pared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si, GaAs, and GaN-on-Si transistors. Typical Performance Over 12.7-13.25 GHz (TC = 25ºC) Parameter 12.7 GHz 13.0...