CMPA1C1D060D Description
The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties pared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN...
CMPA1C1D060D Key Features
- 26 dB Small Signal Gain
- 60 W Typical PSAT
- Operation up to 40 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.209 x 0.240 x 0.004 inches