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CMPA2060035F
35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier
Description
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink.
PN : CMPA2060035F Package Type : 440219
Typical Performance Over 2.0-6.0 GHz, 28 V (TC = 25ºC)
Parameter
2.0 GHz
4.
CMPA2060035F Datasheet
