CMPA2060035F Overview
Description
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
Key Features
- 28 dB Small Signal Gain
- 35 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
