CMPA2060035F Overview
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors.
CMPA2060035F Key Features
- 28 dB Small Signal Gain
- 35 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation