Datasheet Details
| Part number | CMPA2060035F1 |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.81 MB |
| Description | Power Amplifier |
| Datasheet | CMPA2060035F1-MACOM.pdf |
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Overview: CMPA2060035F1 35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier.
| Part number | CMPA2060035F1 |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.81 MB |
| Description | Power Amplifier |
| Datasheet | CMPA2060035F1-MACOM.pdf |
|
|
|
The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors.
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|---|---|
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