MACOM Technology Solutions DU28120T
RF Power MOSFET Transistor
| Part No. | DU28120T |
|---|---|
| Datasheet | DU28120T Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | RF Power MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
● N-Channel enhancement mode device● DMOS structure
● Lower capacitances for broadband operation
● High saturated output power
● Lower noise figure than bipolar devices
● RoHS Compliant Package Outline Rev. V1
ABSOLUTE MAXIMUM RATINGS
AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 24 269 200 -55 to +150 0.65 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 4.0 - j8.0 3.4 + j2.4 50 1.0 - j2.5 2.2 +j1.3 100 1.0 - j0.5 2.2 + j0.0 VDD = 28V, IDQ = 600mA, POUT = 120 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. LETTER DIM A B C D E F G H J K L M N MILLIMETERS MIN MAX
