DU28120T Datasheet | Tyco Electronics

Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices 12OW, 28V Absolute Maximum Ratings at 25°C Parameter Symbol V DS Rating 65 Units V Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance V cc ‘DS I 24 I - I PD TJ T STG 8JC 269 200 -55 to+150 0.65 w “C “C “C/W LETTER DIN A B c D I I m 24.64 l B29 2121 l2.60 622 ml 5.33 10s I I rmcs WI 24.99 1054 21.97 1285 640 4s 559 x33 I 3.30 I I ml .970 720 83.5 I lax se0 no 865 I I A% I .506 I 245 .tio 210 200 d20 1 255 .x0 220 2lo .lr) i F G H 1 J 1 .l O .l S Electrical Characteristics at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain C ES C oss C RSS GP 13 60 - 270 240 48 3O:l p F p F p F d B % - V,,=28.0 V,,=28.0 V,,=28.0 Vb,=28.0 V, F=l .O MHz V, Fz1.0 MHz V, F=l .O MHz V. I,,=600 m A, P,,,.=120.0 W, F=175 MHz MHz Drain Efficiency Load Mismatch Tolerance ‘ID VSWR-T Vbb~28.0 V, I,,=600 V,,=28.0 V, I,,=600 m A, PO,?1 20.0 W, F=l75 m A,...