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DU28120T - RF MOSFET Power Transistor

Features

  • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices 12OW, 28V DU28120T Absolute Maximum Ratings at 25°C Parameter Symbol V DS Rating 65 Units V Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance I V cc ‘DS I 20 24 I V.
  • I PD TJ T STG 8JC 269 200 -55 to+150 0.65 w “C “C “C/W I I LETTER DIN.

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Datasheet Details

Part number DU28120T
Manufacturer Tyco Electronics
File Size 183.20 KB
Description RF MOSFET Power Transistor
Datasheet download datasheet DU28120T Datasheet
Additional preview pages of the DU28120T datasheet.

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Full PDF Text Transcription

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E XF .-----r = an AMP company RF MOSFET Power Transistor, 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices 12OW, 28V DU28120T Absolute Maximum Ratings at 25°C Parameter Symbol V DS Rating 65 Units V Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance I V cc ‘DS I 20 24 I V * I PD TJ T STG 8JC 269 200 -55 to+150 0.65 w “C “C “C/W I I LETTER DIN A B c D I I m 24.64 lB29 2121 l2.60 622 ml 5.33 10s I I rmcs WI 24.99 1054 21.97 1285 640 4s 559 x33 I 3.30 I I ml .970 720 83.5 I lax se0 no 865 I I A% I .506 I 245 .tio 210 200 d20 1 255 .x0 220 2lo .
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