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RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz
Features
l l l l l
DU2812OV
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
..
Absolute Maximum Ratings at 25°C
Electrical Characteristics
Parameter
Drain-Source Drain-Source Gate-Source Breakdown Voltage
at 25°C
Symbol
BV,,, ’05s ‘GSS V GSfW GM C ISS C oss C Rss GP ‘1D 5 13 60 10 2.0 3.0
Min
65
Max
6.0 6.0 6.0 270 240 48 -
Units
V mA pA V S pF pF PF dB % % V,,=O.O V, l,s=30.0 mA’ V,,=28.0 v,,=20.0 V,,=lO.O V,,=lO.O V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 v, v,,=o.o v, v,,=o.
DU28120V Datasheet
