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DU28120V
RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V
Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
65
Gate-Source Voltage Drain-Source Current
VGS IDS
20 12
Power Dissipation
PD 250
Junction Temperature Storage Temperature
TJ TSTG
200 -55 to +150
Thermal Resistance
θJC
0.7
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz) 30
ZIN (Ω) 3.0 - j12.5
ZLOAD (Ω) 8.0 + j6.0
50
1.5 - j8.5
7.0 +j6.5
100
1.0 - j6.0
6.5 + j5.
DU28120V Datasheet
