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DU28200M Datasheet PDF

MACOM Technology Solutions DU28200M

RF Power MOSFET Transistor

  • Max Operating Temp : 200°C
  • Min Operating Temp : -65°C
Source: Octopart
Part No. DU28200M
Datasheet DU28200M Download
Manufacturer
MACOM Technology Solutions
Description RF Power MOSFET Transistor
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DU28200M datasheet page 1 preview

FEATURES

● N-Channel enhancement mode device
● DMOS structure
● Lower capacitances for broadband operation
● High saturated output power
● Lower noise figure than bipolar devices
● RoHS Compliant

ABSOLUTE MAXIMUM RATINGS

AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 20 389 200 -65 to +150 0.45 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 2.7 - j4.8 7.2 - j1.9 100 1.6 - j3.0 5.25 - j1.4 150 1.5 - j2.0 5.0 - j0.7 175 1.6 - j1.0 5.2 - j0.6 200 1.8 - j0.5 5.5 - j0.5 VDD = 28V, IDQ = 1000mA, POUT = 200 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline LET
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