MACOM Technology Solutions DU2880V
RF Power MOSFET Transistor
| Part No. | DU2880V |
|---|---|
| Datasheet | DU2880V Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | RF Power MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
● N-Channel enhancement mode device● DMOS structure
● Lower capacitances for broadband operation
● High saturated output power
● Lower noise figure than competitive devices
● RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
AT 25° C Parameter Symbol Rating Drain-Source Voltage VDS 65 Gate-Source Voltage VGS 20 Drain-Source Current Power Dissipation IDS PD 8* 206 Junction Temperature Storage Temperature Thermal Resistance TJ TSTG θJC 200 -55 to +150 0.85 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 4.5 - j14.5 13.5 +j4.5 100 3.0 - j10.5 13.5 + j6.0 175 2.0 - j7.5 12.0 + j4.5 VDD = 28V, IDQ = 400mA, POUT = 80 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline Rev. V1ELECTRICAL CHARACTERISTICS
AT 25°C Par
