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an
AMP
company
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
. N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices
DU2880V
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation ( JunctionTemperature I StorageTemperature Thermal Resistance 1 ( I
VOS VGS ‘OS P, T, T,,, 0JC I I
65 20 8’ 206 ZOO
I I
” ” A w I
I
(
“C
“‘2
I
(
( -55 to +150 0.65
“CM,
Electrical Characteristics
at 25°C
* Per Side
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
Asia/Pacific:
Tel.