Datasheet4U Logo Datasheet4U.com

DU2880V - RF MOSFET Power Transistor

Features

  • . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices DU2880V Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation ( JunctionTemperature I StorageTemperature Thermal Resistance 1 ( I VOS VGS ‘OS P, T, T,,, 0JC I I 65 20 8’ 206 ZOO I I ” ” A w I I ( “C “‘2 I ( ( -55 to +150 0.6.

📥 Download Datasheet

Datasheet preview – DU2880V

Datasheet Details

Part number DU2880V
Manufacturer Tyco Electronics
File Size 190.37 KB
Description RF MOSFET Power Transistor
Datasheet download datasheet DU2880V Datasheet
Additional preview pages of the DU2880V datasheet.
Other Datasheets by Tyco Electronics

Full PDF Text Transcription

Click to expand full text
an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices DU2880V Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation ( JunctionTemperature I StorageTemperature Thermal Resistance 1 ( I VOS VGS ‘OS P, T, T,,, 0JC I I 65 20 8’ 206 ZOO I I ” ” A w I I ( “C “‘2 I ( ( -55 to +150 0.65 “CM, Electrical Characteristics at 25°C * Per Side Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel.
Published: |