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DU2880T
RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V
Features
N- channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 16 206 200 -65 to +150 0.85
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
5.4 - j4.4
5.7 +j4.7
50
2.5 - j4.4
3.4 + j3.5
100
1.6 - j3.4
2.4 + j2.4
175
0.7 - j1.2
1.7 + j0.
DU2880T Datasheet
