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DU2880 - RF MOSFET Power Transistor

Features

  • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O. O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo. o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0.

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Datasheet Details

Part number DU2880
Manufacturer Tyco Electronics
File Size 198.87 KB
Description RF MOSFET Power Transistor
Datasheet download datasheet DU2880 Datasheet
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Full PDF Text Transcription

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an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O.O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo.o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, V,,=O.O V v, v,,=o.o v Test Conditions Leakage Current LeakageCurrent ‘DSS ‘GSS V GSITHI GM C ISS C ass %s GP % VSWR-T 13 60 2.0 2.
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