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DU2880V
RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
65
Gate-Source Voltage
VGS
20
Drain-Source Current Power Dissipation
IDS PD
8* 206
Junction Temperature Storage Temperature Thermal Resistance
TJ TSTG θJC
200 -55 to +150
0.85
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
4.5 - j14.5
13.5 +j4.5
100
3.0 - j10.5
13.5 + j6.0
175
2.0 - j7.5
12.0 + j4.
DU2880V Datasheet
