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LF2805A Datasheet PDF

MACOM Technology Solutions LF2805A

RF Power MOSFET Transistor

Part No. LF2805A
Datasheet LF2805A Download
Manufacturer
MACOM Technology Solutions
Description RF Power MOSFET Transistor
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LF2805A datasheet page 1 preview

FEATURES

● N-Channel enhancement mode device
● DMOS structure
● Lower capacitances for broadband operation
● Common source configuration
● Lower noise floor
●

APPLICATIONS

Broadband linear operation 500 MHz to 1400 MHz
● RoHS Compliant

ABSOLUTE MAXIMUM RATINGS

@ 25°C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 1.4 14.4 200 -65 to +150 12.1 Units V V A W °C °C °C/W Typical Device Impedance F (MHz) 500 ZIN (Ω) 4.3 - j29.0 ZLOAD (Ω) 27.3 +j28.6 1000 2.2 - j2.75 8.0 + j16.0 1400 2.8 - j3.0 9.4 + j10.6 VDD = 28V, IDQ = 50mA, POUT = 5.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline Rev. V1 LETTER D
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