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MA4AGSW2 - SPDT AlGaAs PIN Diode Switch

General Description

The MA4AGSW2 is an Aluminum-Gallium-Arsenide, single pole, double throw (SPDT), PIN diode switch.

Key Features

  • Ultra Broad Bandwidth: 50 MHz to 50 GHz.
  • Functional Bandwidth: 50 MHz to 70 GHz.
  • Insertion Loss: 0.7 dB.
  • Isolation: 33 dB @ 50 GHz.
  • Low Current Consumption: -10 mA for Low Loss State +10 mA for Isolation State.
  • MACOMs Unique AlGaAs Hetero-Junction Anode Technology.
  • Silicon Nitride Passivation.
  • Polymer Scratch Protection.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPDT AlGaAs PIN Diode Switch Features • Ultra Broad Bandwidth: 50 MHz to 50 GHz • Functional Bandwidth: 50 MHz to 70 GHz • Insertion Loss: 0.7 dB • Isolation: 33 dB @ 50 GHz • Low Current Consumption: -10 mA for Low Loss State +10 mA for Isolation State • MACOMs Unique AlGaAs Hetero-Junction Anode Technology • Silicon Nitride Passivation • Polymer Scratch Protection • RoHS Compliant Applications • Aerospace & Defense • ISM Description The MA4AGSW2 is an Aluminum-Gallium-Arsenide, single pole, double throw (SPDT), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s hetero-junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.