FEATURES
Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection n n n n MA4AGSW2 Layout DESCRIPTION
M/A-COM’s AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. Absolute Maximum Ratings1 @ TA = +25 °C (Unless otherwise specified) Parameter Operating Temperature Storage Temperature Incident C.W.
Tyco Electronics
