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MA4E2502 - Silicon Schottky Diode

General Description

The MA4E2502 Surmount™ Series diodes are silicon low, medium, and high barrier Schottky devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • Extremely Low Parasitic Capacitance & Inductance.
  • Surface Mountable in Microwavable Circuits, No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours).
  • Lower Susceptibility to ESD Damage.

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SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes MA4E2502 Series Rev. V4 Features • Extremely Low Parasitic Capacitance & Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours) • Lower Susceptibility to ESD Damage Description and Applications The MA4E2502 Surmount™ Series diodes are silicon low, medium, and high barrier Schottky devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.