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MA4E2502 Datasheet Silicon Schottky Diode

Manufacturer: MACOM Technology Solutions

Overview: SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes MA4E2502 Series Rev.

General Description

and Applications The MA4E2502 Surmount™ Series diodes are silicon low, medium, and high barrier Schottky devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium.

The bination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Key Features

  • Extremely Low Parasitic Capacitance & Inductance.
  • Surface Mountable in Microwavable Circuits, No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours).
  • Lower Susceptibility to ESD Damage.

Similar Datasheet

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