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MA4E2502 - Medium and High Barrier Silicon Schottky Diodes

General Description

The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • Extremely Low Parasitic Capitance and Inductance.
  • Surface Mountable in Microwave Circuits, No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours).
  • Lower Susceptibility to ESD Damage MA4E2502 Series V5 The MA4E2502 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) • Lower Susceptibility to ESD Damage MA4E2502 Series V5 The MA4E2502 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters.