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MA4E2502 Datasheet Medium And High Barrier Silicon Schottky Diodes

Manufacturer: Tyco Electronics (now TE Connectivity)

Overview: SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes.

General Description

and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium.

The bination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics ..

Key Features

  • Extremely Low Parasitic Capitance and Inductance.
  • Surface Mountable in Microwave Circuits, No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours).
  • Lower Susceptibility to ESD Damage MA4E2502 Series V5 The MA4E2502 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
MACOM Logo MA4E2502 Silicon Schottky Diode MACOM

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