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MA4P4006-1041 - PIN Diode

General Description

The MA4P4006-1041 PIN diode utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in switch applications at frequencies as low as 1 MHz.

Key Features

  • High Power Switching Diode.
  • Low Loss, Low Distortion Design.
  • Rugged, Hermetically Sealed Packaging.
  • Threaded Stud Attachment.
  • Non Magnetic to 3 Tesla for MRI.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PIN Diode Features • High Power Switching Diode • Low Loss, Low Distortion Design • Rugged, Hermetically Sealed Packaging • Threaded Stud Attachment • Non Magnetic to 3 Tesla for MRI Applications • RoHS* Compliant Applications • Filter Switches • Antenna Couplers • Power Amplifier By-pass Switches • MRI Switches Description The MA4P4006-1041 PIN diode utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in switch applications at frequencies as low as 1 MHz. The semiconductor technology utilized in this design draws on MACOM’s substantial experience in PIN diode design and wafer fabrication.