MA4P4006-1041 Datasheet | MACOM Technology Solutions

PIN Diode Features - High Power Switching Diode - Low Loss, Low Distortion Design - Rugged, Hermetically Sealed Packaging - Threaded Stud Attachment - Non Magnetic to 3 Tesla for MRI Applications - Ro HS- pliant Applications - Filter Switches - Antenna Couplers - Power Amplifier By-pass Switches - MRI Switches Description The MA4P4006-1041 PIN diode utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in switch applications at frequencies as low as 1 MHz. The semiconductor technology utilized in this design draws on MA’s substantial experience in PIN diode design and wafer fabrication. The result is a device which has a thick I-region and long carrier lifetime while maintaining low series resistance and capacitance values. Rev. V3 ODS-1041 Packaging The metal-ceramic package used for this diode design was developed specifically for high voltage/ high power hermetic applications. The PIN diode chip is eutectically bonded to the package using gold/tin high temperature solder. The anode connection is ribbon bonded to ensure a robust attachment to the anode contact and the package flange. The package is sealed using a projection welding technique in an inert environment. This package meets the environmental requirements of MIL-STD-202 and MIL-STD750. Ordering Information Part Number Package Style Pill Package/Threaded Stud - Restrictions on Hazardous Substances, pliant to current Ro HS EU directive. 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: https://.ma./support DC-0031918 PIN Diode Electrical Specifications @ TA = 25°C Parameter Reverse...