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NPT25100 - 28V GaN Power Amplifier

General Description

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.

Rev.

Key Features

  • GaN on Si HEMT D-Mode Power Amplifier.
  • Suitable for Linear & Saturated.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
NPT25100B 28V GaN Power Amplifier
NPT25100P 28V GaN Power Amplifier
NPT2010 GaN on Silicon General Purpose Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broadband Operation from 2.1 - 2.7 GHz • 125 W P3dB Peak Envelope Power • 90 W P3dB CW Power • 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg., 10 MHz channel bandwidth • 16.5 dB Gain • 26% Efficiency • Characterized for Operation up to 32 V • 100% RF Tested • Thermally Enhanced Industry Standard Package • High Reliability Gold Metallization Process • RoHS* Compliant Applications • Defense Communications • Land Mobile Radio • Avionics • Wireless Infrastructure • ISM • VHF/UHF/L/S-Band Radar Description The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.