NPT25100B Overview
Key Specifications
Description
The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.
Key Features
- GaN on Si HEMT D-Mode Power Amplifier
- Suitable for Linear & Saturated Applications
- Broadband Operation from 2.1 - 2.7 GHz
- 125 W P3dB Peak Envelope Power
- 90 W P3dB CW Power
- 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg., 10 MHz channel bandwidth
- 16.5 dB Gain
- 26% Efficiency
- Characterized for Operation up to 32 V
- 100% RF Tested
