NPT25100B Overview
The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange. V1 NPT25100P Ordering Information Part Number NPT25100B NPT25100P Package Standard Flange Earless Flange RF Specifications (CW)1:.
NPT25100B Key Features
- GaN on Si HEMT D-Mode Power Amplifier
- Suitable for Linear & Saturated
NPT25100B Applications
- Broadband Operation from 2.1