PH2731-5M Datasheet PDF

FEATURES

● NPN silicon microwave power transistors
● Common base configuration
● Broadband Class C operation
● High efficiency inter-digitized geometry
● Diffused emitter ballasting resistors
● Gold metallization system
● Internal input and output impedance matching
● Hermetic metal/ceramic package
● RoHS compliant Outline Drawing Rev. V1

ABSOLUTE MAXIMUM RATINGS

at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 0.7 50 -65 to +200 200 Units V V A W °C °C

ELECTRICAL SPECIFICATIONS

: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 10mA Collector-Emitter Leakage Current VCE = 40V Thermal Resistance Vcc = 36V, Pin = 1.0W Output Power Vcc = 36V, Pin = 1.0W Power Gain Vcc =