MACOM Technology Solutions UF2805B
RF Power MOSFET Transistor
| Part No. | UF2805B |
|---|---|
| Datasheet | UF2805B Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | RF Power MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel enhancement mode device● DMOS structure
● Lower capacitances for broadband operation
● Common source configuration
● Lower noise floor
● 100 MHz to 500 MHz operation Package Outline Rev. V1
ABSOLUTE MAXIMUM RATINGS
AT 25° C Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 1.4 14.4 200 -55 to +150 12.1 V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 15.0-j8.0 35.0+j55.0 300 8.0-j43.0 29.0+j40.0 500 4.0-j29.0 28.0-j29.0 VDD=28V, IDQ=50 Ma, POUT=100.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to drain.ELECTRICAL CHARACTERISTICS
AT 25°C Parameter Symbol Min Drain-Source Breakdown Voltage BVDSS 65 Drain-Source Leakage Current IDSS - Gate-Source Leakage Current IGSS - Gate Thr...
