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UF2805B - RF Power MOSFET Transistor

Datasheet Summary

Description

at any time, without notice.

MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Features

  • N-channel enhancement mode device.
  • DMOS structure.
  • Lower capacitances for broadband operation.
  • Common source configuration.
  • Lower noise floor.
  • 100 MHz to 500 MHz operation Package Outline Rev. V1.

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Datasheet Details

Part number UF2805B
Manufacturer MACOM
File Size 625.12 KB
Description RF Power MOSFET Transistor
Datasheet download datasheet UF2805B Datasheet
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Full PDF Text Transcription

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UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  100 MHz to 500 MHz operation Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 1.4 14.4 200 -55 to +150 12.1 V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 15.0-j8.0 35.0+j55.0 300 8.0-j43.0 29.0+j40.0 500 4.0-j29.0 28.0-j29.0 VDD=28V, IDQ=50 Ma, POUT=100.
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