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UF2820P - RF Power MOSFET Transistor

General Description

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Key Features

  • N-channel enhancement mode device.
  • DMOS structure.
  • Lower capacitances for broadband operation.
  • Common source configuration.
  • Lower noise floor Package Outline Rev. V1.

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UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 2.8 A Power Dissipation PD 53 W Junction Temperature Storage Temperature Thermal Resistance TJ TSTG θJC 200 -55 to 150 3.3 °C °C °C/W TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) 100 9.5-j60.0 300 5.0-j35.0 ZLOAD (Ω) 4.0+j68.0 40.0+j48.0 500 2.0-j22.0 36.0+j34.0 VDD=28V, IDQ=200 mA, POUT =20.0 W ZIN is the series equivalent input impedance of the device from gate to source.