UF2820P
UF2820P is RF Power MOSFET Transistor manufactured by MACOM Technology Solutions.
Features
- N-channel enhancement mode device
- DMOS structure
- Lower capacitances for broadband operation
- mon source configuration
- Lower noise floor
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature Storage Temperature Thermal Resistance
TJ TSTG θJC
200 -55 to 150
°C °C °C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
9.5-j60.0
5.0-j35.0
ZLOAD (Ω) 4.0+j68.0 40.0+j48.0
2.0-j22.0
36.0+j34.0
VDD=28V, IDQ=200 m A, POUT =20.0 W
ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to...
