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UF2820P - RF Power MOSFET Transistor

Datasheet Summary

Description

at any time, without notice.

MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Features

  • N-channel enhancement mode device.
  • DMOS structure.
  • Lower capacitances for broadband operation.
  • Common source configuration.
  • Lower noise floor Package Outline Rev. V1.

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Datasheet Details

Part number UF2820P
Manufacturer MACOM
File Size 615.21 KB
Description RF Power MOSFET Transistor
Datasheet download datasheet UF2820P Datasheet
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Full PDF Text Transcription

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UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 2.8 A Power Dissipation PD 53 W Junction Temperature Storage Temperature Thermal Resistance TJ TSTG θJC 200 -55 to 150 3.3 °C °C °C/W TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) 100 9.5-j60.0 300 5.0-j35.0 ZLOAD (Ω) 4.0+j68.0 40.0+j48.0 500 2.0-j22.0 36.0+j34.0 VDD=28V, IDQ=200 mA, POUT =20.0 W ZIN is the series equivalent input impedance of the device from gate to source.
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