2N5832 Datasheet PDF

FEATURES

● Through Hole Package omponents 21201 Itasca Street Chatsworth ! "# $ % ! "# 2N5832 Plastic-case Bipolar NPN Transistor C B E Pin Configuration Bottom View

ELECTRICAL CHARACTERISTICS

@ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=300mAdc) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Current (VCE=120Vdc) Min 140 160 5.0 50 Max Units A Vdc Vdc Vdc nAdc TO-92 E OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO B ON CHARACTERISTICS hFE DC Current Gain* C 175 (I C=10mAdc, VCE=5.0Vdc) 500 VCE(sat) Collector-Emitter Saturation Voltage (I C=10mAdc) 0.2 Vdc D SMALL-SIGNAL CHARACTERISTICS fT Cob NF Current Gain-Bandwidth Product (I C=10mAdc) Output Capacitance Noise Figure ---dB DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 DIMENSIONS MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 100 4.0 MHz pF G Note: Maximum at typical JEDEC condition V(BR)CER @ R=10 OHMS MAX .185 .185 --.020 .145 .105 MAX 4.