2SB772-R
2SB772-R is PNP Silicon Plastic-Encapsulate Transistor manufactured by Micro Commercial Components.
Features
- Lead Free Finish/Ro HS pliant (Note1) ("P" Suffix designates Ro HS pliant. See ordering information)
- Epoxy meets UL 94 V-0 flammability rating
- Moisure Sensitivity Level 1
- Capable of 1.25Watts of Power Dissipation.
- Collector-current 3.0A
- Collector-base Voltage 40V
- Operating and storage junction temperature range: -55OC to +150OC
- Halogen free available upon request by adding suffix "-HF"
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO V (BR)CBO V (BR)EBO I CBO ICEO IEBO
Collector-Emitter Breakdown Voltage (IC=10m Adc, IB=0) Collector-Base Breakdown Voltage (I C=100u Adc, IE=0) Emitter-Base Breakdown Voltage (I E=100u Adc, IC=0) Collector Cutoff Current (V CB=40Vdc, IE=0) Collector Cutoff Current (V CE=30Vdc, IB=0) Emitter Cutoff Current (V EB=6.0Vdc, IC=0)
ON CHARACTERISTICS
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Vdc
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Vdc
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Vdc
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1.0 u Adc
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1.0 u Adc
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1.0 u Adc h FE(1)
DC Current Gain (IC=1.0Adc, VCE=2.0Vdc) h FE(2)
DC Current Gain (IC=100m Adc, VCE=2.0Vdc)
V CE(sat) V BE(sat)
Collector-Emitter Saturation Voltage (I C=2.0Adc, IB=0.2Adc) Base-Emitter Saturation Voltage (I C=2.0Adc, IB=0.2Adc)
SMALL-SIGNAL CHARACTERISTICS
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