FEATURES
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● omponents 21201 Itasca Street Chatsworth ! "# $ % ! "# 2SC3973B With TO-220Fa package High-voltage, high-speed applications NPN Silicon Power Transistors Rating 500 1000 7.0 7.0 45 -55 to +150 -55 to +150 Unit V V V A W O C O C MAXIMUM RATINGS
Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature TO-220Fa ELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (IC=50mAdc, IB =0) Collector-Base Cutoff Current (VCB=1000Vdc,IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) Forward Current Transfer ratio (IC=0.1Adc, V CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=4.0Adc, IB =0.8Adc) Base-Emitter Saturation Voltage (IC=4.0Adc,IB =0.8Adc) Min 500 ----Max --100 100 Units Vdc uAdc uAdc DIM A B C D E G H I J K L M N O P Q R DIMENSIONS INCHES MIN MAX .02 .03 .29 .30 --...
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