2SC3973B Overview
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; VCE=5V 15 8 MIN 500 2SC3973B SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.0...

