FEATURES
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● With TO-220Fa package Amplifier applications NPN Silicon Power Transistors Rating 60 100 5.0 5.0 25 -55 to +150 -55 to +150 Unit V V V A W O C O C MAXIMUM RATINGS
Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature TO-220Fa ELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=100Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) Forward Current Transfer ratio (IC=1.0Adc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (IC=4.0Adc, IB =0.2Adc) Base-Emitter Saturation Voltage (IC=4.0Adc,IB =0.2Adc) Min 60 ----Max --10 1.0 Units Vdc uAdc mAdc DIM A B C D E G H I J K L M N O P Q R DIMENSIONS INCHES MIN MAX .02 .03 .29 .30 --.67 .53 --.16 --.40 --.22 .16 .17 .12 .13 --.06 .03 .04 2.84 .11 .18 .22 --.17 --.11...
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