Datasheet Details
| Part number | 2SC4596 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4596-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4596.
| Part number | 2SC4596 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4596-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4596 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A ;
IB= 0.3A, L= 1mH V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4596 | Silicon NPN Power Transistor | SaventIC |
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2SC4596 | NPN Silicon Power Transistor | Micro Commercial Components |
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2SC4596E | NPN TRANSISTOR | Wing Shing Computer Components |
| Part Number | Description |
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| 2SC4507 | NPN Transistor |
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| 2SC4510 | NPN Transistor |
| 2SC4511 | NPN Transistor |
| 2SC4512 | NPN Transistor |
| 2SC4517 | NPN Transistor |
| 2SC4518 | NPN Transistor |