C4596E
C4596E is 2SC4596E manufactured by Wing Shing Computer.
2SC4596E
GENERAL DESCRIPTION
High frequency, ..
SILICON EPITAXIAL PLANNAR TRANSISTOR high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s
VCESM VCEO IC ICM Ptot VCEsat VBE tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Emitter forward voltage Fall time
Tmb 25 IC = 2A; IB = 0.2A IE = 2A IC=2A,IB1=-IB2=0.2A,VCC=30V
- LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55
- Tmb 25
MAX 100 60 5 5 1 25 150 150
UNIT V V V A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO IEBO V(BR)CEO VCEsat h FE f T Cc ton ts tf
PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 30MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time
CONDITIONS VCB=100V VEB=5V IC=1m A IC =2A; IB = 0.2A IC =1A; VCE = 5V IC =0.5A; VCE = 10V VCB = 10V IC=2A,IB1=-IB2=0.2A,VCC=30V IC=2A,IB1=-IB2=0.2A,VCC=30V IC=2A,IB1=-IB2=0.2A,VCC=30V
MAX 0.1 0.1 1.5 200 80 0.5 1.5 0.5
60 100 120
UNIT m A m A V V MHz p F us us us
Wing Shing puter ponents Co., (H.K.)Ltd. Homepage: http://.wingshing.
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar....
