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C4596E - 2SC4596E

General Description

High frequency, www.datasheet4u.com SILICON EPITAXIAL PLANNAR TRANSISTOR high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s VCESM VCEO IC IC

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Part number C4596E
Manufacturer Wing Shing Computer
File Size 101.20 KB
Description 2SC4596E
Datasheet download datasheet C4596E Datasheet

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2SC4596E GENERAL DESCRIPTION High frequency, www.datasheet4u.com SILICON EPITAXIAL PLANNAR TRANSISTOR high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VBE tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Emitter forward voltage Fall time Tmb 25 IC = 2A; IB = 0.2A IE = 2A IC=2A,IB1=-IB2=0.