C4596 Overview
Description
With TO-220Fa package - Low collector saturation voltage - Wide area of safe operation APPLICATIONS - For high speed power switching and DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 60 5 5 10 25 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA , IB=0 IE=50µA , IC=0 IC=3A, IB=0.15A IC=4A, IB=0.2A IC=3A, IB=0.15A IC=4A, IB=0.2A VCB=100V, IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=10V 60 80 MIN 60 5 2SC4596 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE Cob fT TYP. MAX UNIT V V 0.3 0.5 1.2 1.5 10 10 320 V V V V µA µA pF MHz 120 Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ; RL=10@ IB1= IB2=0.15A VCCA30V 0.3 1.5 0.3 µs µs µs hFE Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4596 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3.
