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MCU50P04 - P-Channel MOSFET

Features

  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Halogen free available upon request by adding suffix "-HF".
  • Good stability and uniformity with high EAS.
  • Epoxy meets UL 94 V-0 flammability rating.
  • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID EAS VGS IDM R©JC TJ TSTG PD Parameter Drain-source Voltage Drain Current-Continuous Single Pulsed Avalan.

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MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High density cell design for ultra low Rdson • Fully characterized avalanche voltage and current • Halogen free available upon request by adding suffix "-HF" • Good stability and uniformity with high EAS • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID EAS VGS IDM R©JC TJ TSTG PD Parameter Drain-source Voltage Drain Current-Continuous Single Pulsed Avalanche Energy(note1) Gate-source Voltage Pulsed Drain Current Thermal Resistance Junction to Case Operating Junction Temperature Storage Temperature Power Dissipation Rating -40 -50 840 ±20
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