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MMS9012 - PNP Silicon Transistor

Key Features

  • SOT-23 Plastic-Encapsulate Transistors.
  • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
  • Collector-current 0.5A.
  • Collector-base Voltage 40V.
  • Operating and storage junction temperature range: -55OC to +150OC.
  • Marking Code: J3Y PNP Silicon Plastic-Encapsulate Transistor Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9012 Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: J3Y PNP Silicon Plastic-Encapsulate Transistor Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.