JS28F256M29EW Overview
Key Features
- 2Gb = stacked device (two 1Gb die)
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–VCC (I/O buffers)
- Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 25ns – Random access: 100ns (Fortified BGA); 110ns (TSOP)
- Buffer program: 512-word program buffer
- Program time – 0.88µs per byte (1.14 MB/s) TYP when using full 512-word buffer size in buffer program
- Memory organization – Uniform blocks: 128-Kbytes or 64-Kwords each
- Program/erase controller – Embedded byte (x8)/word (x16) program algorithms
- Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation
