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JS28F256M29EWLx - 3 V supply flash memory

Download the JS28F256M29EWLx datasheet PDF. This datasheet also covers the JS28F512M29EWHx variant, as both devices belong to the same 3 v supply flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Supply voltage.
  • VCC = 2.7 to 3.6 V for Program, Erase and Read.
  • VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read.
  • Page size: 16 words or 32 bytes.
  • Page access: 25 ns.
  • Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program.
  • 512-word program buffer Programming time.
  • 0.88 µs per byte (1.14MB/s) typical when using full buff.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JS28F512M29EWHx_Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JS28F256M29EWLx
Manufacturer Numonyx
File Size 2.20 MB
Description 3 V supply flash memory
Datasheet download datasheet JS28F256M29EWLx Datasheet

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JS28F256P30BFE Parallel NOR Flash Embedded Memory Micron

Other Datasheets by Numonyx

Part Number Description
JS28F256M29EWHx 3 V supply flash memory
JS28F256J3F105 256-Mbit StrataFlash Embedded Memory
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JS28F256P30T95 Embedded Memory
JS28F00AM29EWHx 3 V supply flash memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Numonyx™ Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.