JS28F512M29EW Datasheet PDF - MICRON Parallel NOR Flash Embedded Memory Specs

JS28F512M29EW - Parallel NOR Flash Embedded Memory

This page provides the datasheet information for the JS28F512M29EW, a member of the JS28F256M29EW Parallel NOR Flash Embedded Memory family.

Datasheet Summary

Features

Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features.
2Gb = stacked device (two 1Gb die).
Supply voltage.
VCC = 2.7.
3.6V (program, erase, read).
VCCQ = 1.65.
VCC (I/O buffers).
Asynchronous random/page read.
Page size: 16 words or 32 bytes.
Page a.

Datasheet Details

Part number	JS28F512M29EW
Manufacturer	MICRON
File Size	943.45 KB
Description	Parallel NOR Flash Embedded Memory
Datasheet	JS28F512M29EW Datasheet
Additional preview pages of the JS28F512M29EW datasheet.

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Full PDF Text Transcription

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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device (two 1Gb die) • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 25ns – Random access: 100ns (Fortified BGA); 110ns (TSOP) • Buffer program: 512-word program buffer • Program time – 0.88µs per byte (1.

Published: Jan 5, 2018 |