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JS28F512M29EWHx - 3 V supply flash memory

General Description

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Key Features

  • Supply voltage.
  • VCC = 2.7 to 3.6 V for Program, Erase and Read.
  • VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read.
  • Page size: 16 words or 32 bytes.
  • Page access: 25 ns.
  • Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program.
  • 512-word program buffer Programming time.
  • 0.88 µs per byte (1.14MB/s) typical when using full buff.

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Datasheet Details

Part number JS28F512M29EWHx
Manufacturer Numonyx
File Size 2.20 MB
Description 3 V supply flash memory
Datasheet download datasheet JS28F512M29EWHx Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Numonyx™ Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.