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/ HISTORY
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DATE May 11,2011 Oct 17,2011
Oct 10,2012
HISTORY REV. 0
REV.
1
REV. 2
CHANGED CONTENT
CHARGE
。 New making
14.FET。 14.67。 10.。 Protection resistor is added to the gate of discharge control FET in [14.TYPICAL APPLICATION CIRCUIT].
6cells and 7cells protection circuit are added to [14.TYPCAL APPLICATION CIRCUIT].
The parameter of overcharge hysteresis voltage is added to [10. ELECTRICAL CHARACTERISTICS]
10. Max.5ms → Max.15ms 14. DCHG VSS1VSS2 SOC 1.0MΩ → 470kΩ VDD-VSS2 15.
Registered No. was changed. [10. ELECTRICAL CHARACTERISTICS] Overdischarge release dead time Max.5ms → Max.15ms
[14.TYPCAL APPLICATION CIRCUIT]
The output circuit of the DCHG was changed.
The connection method of VSS1 and VSS2 was changed.