MC0G50A Description
VDD=30V,VGS=10V,L=0.5mH, RG=25Ω,Starting Tj=25°C. Copyright©MLS Microelectronics Co., Ltd Rev 1.1 Nov 2024 Page 2 Total 4 .mlssemi.
MC0G50A Key Features
- High density cell design for ultra low RDS(ON)
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application