MLSM ME0G20A
N-Channel MOSFET
FEATURES
● High density cell design for ultra low RDS(ON)● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation ME0G20A 60V/20A N-Channel MOSFET Product Summary VDS RDS(ON) MAX 60V 30mΩ@1S01VD2 40mΩ@D14.5V ID MAX 20A Application
● Power switching application DD D D ME0G20A MLS XXXX ME0G20A: Device code XXXX:Code PDFN3X3-8L view Schematic diagram SS S G Marking and pin assignment
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDS Drain-Source Breakdown Voltage VGS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance Junction-Ambient Tc=25°C 0 Tc=25°C Tc=25°C Tc=25°C Rating 60 ±20 150 -50 to 155 20 96 20 30 70 Unit V V °C °C A A A W °C/W Ordering Information (Example) Ty...