ME0G20A Description
Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation ME0G20A 60V/20A N-Channel MOSFET Product Summary VDS RDS(ON) MAX 60V 30mΩ@1S01VD2 40mΩ@D14.5V ID MAX 20A.
ME0G20A Key Features
- High density cell design for ultra low RDS(ON)
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Power switching application