MEAE20AP Datasheet | MLS Microelectronics

Features - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Application - PWM applications - Power management - Load switch D1 D1 D2 D2 MLSM XXXX MEAE20AP : Device code XXXX : Code -40V/-20A P-Channel MOSFET Product Summary VDS -40V RDS(ON) TYP 20mΩ@-1S10VD2 26mΩ@D1-4.5V ID -20A PDFN3X3-8L view Schematic diagram S1 G1 S2 G2 Marking and pin assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) Drain-Source Breakdown Voltage Gate-Source Voltage Maximum Junction Temperature TSTG Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink Pulse Drain Current Tested Continuous Drain Current Maximum Power...