MLSM MLS2309
P-Channel MOSFET
FEATURES
● Leading trench technology for low RDS(on)● Low Gate Charge
● Excellent package for good heat dissipation Application
● Video monitor
● Power management MLS2309 -60V/-2A P-Channel MOSFET Product Summary VDS RDS(ON) TYP ID -60V 130mΩ@-S110DV2 -2A 160mΩD@1 -4.5V D S9 S9: Device code SOT-23 top view Schematic diagram G S Marking and pin assignment
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDS Drain-Source Breakdown Voltage VGS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDM ID PD RθJA Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance Junction-to-Ambient Tc=25°C 0 Tc=25°C Tc=25°C Tc=25°C Rating -60 ±20 150 -55 to 150 -2 -8 -2 0.35 357 Unit V V °C °C A A A W °C/W Ordering Information (Example) Type Package Marking Minimum Package(pcs) MLS2309 SOT-23 S9 3,0...