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MSN0350D - N-Channel MOSFET

Features

  • VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Lead Free.

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Datasheet Details

Part number MSN0350D
Manufacturer MORESEMI
File Size 651.11 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN0350D Datasheet
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Full PDF Text Transcription

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MSN0350D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Marking and pin assignment PIN Configuration TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0350D MSN0350D TO-252-2L Reel Size - Tape width - Quantity 2500 units Absolute Maximum Ratings (TC=25℃un
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