Datasheet Summary
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
- VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Lead Free
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible Power Supply
Marking and pin assignment
PIN Configuration
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device...