Datasheet Summary
55V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
- VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V
(Typ:4.1mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Lead Free
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device...