MSN05B2K - N-Channel MOSFET

Features

VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Lead Free.

MSN05B2K n-channel mosfet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSN05B2K
Manufacturer	MORESEMI
File Size	445.68 KB
Description	N-Channel MOSFET
Datasheet	MSN05B2K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN05B2K 55V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.

Published: Oct 29, 2016 |