• Part: MSN06B0F
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: MORESEMI
  • Size: 460.91 KB
Download MSN06B0F Datasheet PDF
MORESEMI
MSN06B0F
Feature - VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply PIN Configuration Lead Free Marking and pin assignment TO-220F top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package TO-220F Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current...